کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8033078 | 1517966 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The paper focuses on growth of GaN thin films via plasma assisted molecular beam epitaxy on SiC/Si(111) substrate formed by atom-by-atom substitution method. A comparison with GaN film grown in the same process directly on Si(111) substrate is performed. The films were studied by ellipsometry, electron diffraction and Raman spectroscopy. The results of these measurements are used to compare polarity of the films, crystalline properties, quality and residual elastic stresses in GaN films grown on Si and SiC/Si substrates. It is shown that SiC buffer layer has a positive effect on the structural quality of growing GaN thin films. It was found that use of SiC/Si(111) substrate leads to formation of N-polar film, whereas Ga-polar film is formed on Si(111).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 646, 31 January 2018, Pages 158-162
Journal: Thin Solid Films - Volume 646, 31 January 2018, Pages 158-162
نویسندگان
S.A. Kukushkin, A.M. Mizerov, A.V. Osipov, A.V. Redkov, S.N. Timoshnev,