
Formation of 10-30 nm SiO2/Si structure with a uniform thickness at â¼120 °C by nitric acid oxidation method
Keywords: طیف سنجی فوتوالکتر اشعه ایکس; Scanning transmission electron microscopy; X-ray photoelectron spectroscopy; Oxidation; Silicon; Silicon oxides; Polycrystalline thin films; Insulating films; Semiconductor-insulator interfaces;