کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10127494 | 1645054 | 2018 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Numerical simulation of planar BaSi2 based Schottky junction solar cells toward high efficiency
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The theoretical and experimental studies on BaSi2/Si heterojunction solar cells have demonstrated the great potential in utilization of BaSi2 material as light absorption layer for developing high efficiency solar cells with low cost. In addition to BaSi2/Si heterojunction solar cells, BaSi2 based Schottky junction solar cells could also be achieved by coupling n-type or p-type BaSi2 with suitable metal electrode. In this work, BaSi2 based Schottky junction solar cells were simulated with the program AMPS (analysis of microelectronic and photonic structures)-1D in order to thoroughly understand the mechanism for further improvement in conversion efficiency. Simulation results demonstrated that a simpler structure of metal/n-BaSi2 Schottky junction solar cell with thickness of 2000â¯nm can reach high conversion efficiency up to 24.12% and 25.28% for NDâ¯=â¯1â¯Ãâ¯1015 cmâ3 and NDâ¯=â¯1â¯Ãâ¯1018 cmâ3 respectively, being comparable to BaSi2/Si heterojunction solar cell. Contact barrier height, illumination condition, as well as defect level of metal/n-BaSi2 Schottky junction solar cell were also identified to significantly influence the device performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 149, November 2018, Pages 46-51
Journal: Solid-State Electronics - Volume 149, November 2018, Pages 46-51
نویسندگان
Lian Chen, Hai Chen, Quanrong Deng, Geming Wang, Shenggao Wang,