کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10142155 | 1646091 | 2019 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Achieving wavelength emission beyond the C-band from Type-II InAs-GaAsSb quantum dots grown monolithically on silicon substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
The optical quality enhancement of a GaAs template grown on Silicon substrate using InGaAs/GaAs Dislocation Filters (DFs) combined with an annealing step have been assessed optically using Photoluminescence (PL) of embedded InAs/InGaAs QDs within a GaAs matrix. An annealing temperature after the growth of the DFs of 690â¯Â°C was shown to be optimum, giving an enhanced PL emission from the embedded InAs QDs in terms of intensity and Full Width at Half Maximum (FWHM). InAs quantum dots capped with GaAsSb grown at different temperatures were grown on the optimized GaAs template on Si. The prepared samples were characterized by PL, Atomic Force Microscopy (AFM), excitation power and dependent PL at 77â¯K and 300â¯K. At 77â¯K, the InAs/GaAsSb grown at 484â¯Â°C showed a type II band alignment with an emission wavelength of 1297â¯nm, which is shorter than the emission obtained from the reference sample, where the GaAsSb-capped dots were grown on GaAs (1357â¯nm). By reducing the GaAsSb capping layer growth temperatures to 465â¯Â°C and 450â¯Â°C, the wavelength at 77â¯K was extended to 1375â¯nm and 1480â¯nm respectively, resulting from an increased Sb content in the capping layer. At 300â¯K, a long wavelength emission of 1623â¯nm have been achieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 771, 15 January 2019, Pages 382-386
Journal: Journal of Alloys and Compounds - Volume 771, 15 January 2019, Pages 382-386
نویسندگان
A. Salhi, S. Alshaibani, Y. Alaskar, A. Albadri, A. Alyamani,