کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10148035 | 1646512 | 2018 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electromagnetically induced transparency in a GaAs/InAs/GaAs quantum well
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
Nonlinear optical absorption spectra are analyzed and thereby the electromagnetically induced transparency is investigated in a GaAs/InAs/GaAs quantum well. The taken system is InAs sandwiched between GaAs semiconducting material. The confinement potential and well size of the quantum well are fixed. The three atomic sub-levels are considered and the system is analyzed using a density matrix approach. The intersubband electromagnetically induced transparency in the three level single quantum well is investigated theoretically. The optical susceptibilities, the Rabi frequency and the detuning parameters are investigated in the present work. The variation of real and imaginary parts of optical susceptibility as a function of normalized detuning is brought out. The refractive index and the group velocity of the probe light pulse are described. The variation of group index as a function of probe field energy is investigated. The dependence of the optical susceptibilities on the normalized detuning, refractive index and the group index is brought out.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 550, 1 December 2018, Pages 184-188
Journal: Physica B: Condensed Matter - Volume 550, 1 December 2018, Pages 184-188
نویسندگان
J. Jayarubi, A. John Peter, Chang Woo Lee,