کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10156069 | 1666372 | 2018 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We demonstrate the characteristics of a conductive-bridging random access memory (CBRAM) with Cu/TiW/InGaZnO/Ga2O3/Pt stack structure. The addition of a thin metal-oxide layer (4.5â¯nm-thick Ga2O3) in the bottom of the CBRAM device significantly increases the off-state resistance (ROFF) and the memory window. The IGZO bi-layer CBRAM shows the excellent memory performances, such as low operation current (down to 50â¯Î¼A), high on/off resistance ratio (>103), high switching endurance (up to 103â¯cycles) and the capability of multi-level tuning. Meanwhile, high thermal stability was also achieved. Three decades of resistance window is constantly maintained beyond 104â¯s at 85â¯Â°C. The resistive switching stability and electrical uniformity of bi-layer IGZO/Ga2O3 CBRAM device are obviously enhanced as compared with the one only with a single layer of IGZO film. These results have given a great potential for the transparent amorphous oxide semiconductor (TAOS)-based material utilizing in CBRAM stacks and integrating into the display circuits for future memory-in-pixel applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 354, 25 November 2018, Pages 169-174
Journal: Surface and Coatings Technology - Volume 354, 25 November 2018, Pages 169-174
نویسندگان
Kai-Jhih Gan, Po-Tsun Liu, Yu-Chuan Chiu, Dun-Bao Ruan, Ta-Chun Chien, Simon M. Sze,