کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10275954 | 463410 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of Sn-Se compounds on a gold electrode by electrochemical atomic layer epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
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چکیده انگلیسی
The fabrication of Sn-Se compounds, at room temperature by electrochemical atomic layer epitaxy (EC-ALE) is reported. EC-ALE involves the use of surface limited reactions to form atomic layers of the elements making up a compound (Sn and Se) in a cycle. Cyclic voltammograms were used to determine approximate deposition potentials for each element. The amperometric I-t method and differential pulse anodic stripping voltammetry were used to deposit and study the processes involved in a continuous cycling deposition which were used to form thin films of the compound. Through the analysis of the I-t transients and the stripping voltammograms it is possible to establish the formation of Sn-Se compounds. Taking into account the charges involved in the I-t deposition process, a general reaction scheme that considers the formation of SnSe2, SnSe2 â x and SnSe compounds is proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electroanalytical Chemistry - Volume 576, Issue 1, 15 February 2005, Pages 171-175
Journal: Journal of Electroanalytical Chemistry - Volume 576, Issue 1, 15 February 2005, Pages 171-175
نویسندگان
Zhiqing Qiao, Wei Shang, Chunming Wang,