کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364443 | 871674 | 2011 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modelling of through silicon via and devices electromagnetic coupling
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
This paper is essentially composed of two parts for future synthesis. We developed 2D and 3D simulations, starting from a 0.35 μm standard CMOS technology, focusing on through silicon via or redistribution layer induced coupling; nMOSFET, pMOSFET, and the sensitive regions of the CMOS inverter are investigated. We also study stacked devices in 3D circuits, in the radiofrequency range, and propagation of electromagnetic waves along some interconnections with discontinuities. This study is performed in the time domain-a finite-difference time-domain method is applied to the analysis of some vias flanked by two striplines, all embedded in silicon. Electric and magnetic field distributions, transmission and reflexion parameters, and pulse propagations along a transverse via are presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 42, Issue 2, February 2011, Pages 316-324
Journal: Microelectronics Journal - Volume 42, Issue 2, February 2011, Pages 316-324
نویسندگان
Mohamed Abouelatta-Ebrahim, Rabah Dahmani, Olivier Valorge, Francis Calmon, Christian Gontrand,