کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10365494 872100 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures
چکیده انگلیسی
Different processes involving an inductively coupled plasma reactor are presented either for deep reactive ion etching or for isotropic etching of silicon. On one hand, high aspect ratio microstructures with aspect ratio up to 107 were obtained on sub-micron trenches. Application to photonic MEMS is presented. Isotropic etching is also used either alone or in combination with anisotropic etching to realize various 3D shapes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 36, Issue 7, July 2005, Pages 673-677
نویسندگان
, , , , , , ,