کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10365669 | 872161 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis and resolution of a thermally accelerated early life failure mechanism in a 40Â V GaN FET
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
An early life failure mechanism was discovered on a 0.25-µm 40 V GaN FET technology. Through accelerated life testing (ALT), it was determined that the early life failure mechanism was thermally accelerated with a high activation energy, which means that it is not a concern a normal operating conditions up to the maximum rated junction temperature. Subsequent improvements to the process resulted in elimination of the early life failure mechanism. With the improved process, single-mode ALT lifetime distributions and excellent reliability performance down to low failure fractions were demonstrated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 54, Issue 12, December 2014, Pages 2675-2681
Journal: Microelectronics Reliability - Volume 54, Issue 12, December 2014, Pages 2675-2681
نویسندگان
Donald A. Gajewski, Randall D. Lewis, Benjamin M. Decker,