کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10365688 | 872161 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The transient analysis of latch-up in CMOS transmission gate induced by laser
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
An analytical model of transient latch-up in CMOS transmission gate induced by laser is established. The time-dependent current characteristics of the parasitic silicon controlled rectifier (SCR) under different injected photocurrent are illustrated. The model analyzes the trigger conditions for latch-up and describes the dynamic process varying with time. The photocurrent threshold causing latch-up under different pulse widths and repetition frequencies is obtained, which agrees well with the experimental results reported in the literature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 54, Issue 12, December 2014, Pages 2775-2781
Journal: Microelectronics Reliability - Volume 54, Issue 12, December 2014, Pages 2775-2781
نویسندگان
Weicheng Qiu, Xiang-Ai Cheng, Rui Wang, Zhongjie Xu, Chao Shen,