کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10400977 | 891133 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Depth profiles, surface damage and lattice location of boron/deuterium co-doped diamond
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Ion-beam-analyses (IBA) on a boron doped plasma-deuterated single crystal diamond are reported. Such samples have been reported to show an as-yet unexplained (Nature Materials 2, 482 (2003)) conversion from p-type (when as grown-B doped) to n-type (when deuterated). The present results yield information on the degree of crystallinity and on the lattice location of the B and D in the sample. They show that the diamond epitaxy is good, that the location of the B (even after deuteration) is mostly substitutional. However, the deuterium is not aligned along the <100> crystallographic axis. The absolute concentrations of B and D indicate that the n-type conductivity is associated with a B-Dn complex with n â¥Â 2, in agreement with earlier experiments and some theoretical models. A surface damage layer of about 2 nm following the plasma exposure is also reported.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 14, Issue 10, October 2005, Pages 1600-1604
Journal: Diamond and Related Materials - Volume 14, Issue 10, October 2005, Pages 1600-1604
نویسندگان
R. Kalish, S. Dhar, L.C. Feldman,