Synthesis and structural properties of GaN particles from GaO2H powders

Gallium nitride(GaN) powders have been synthesized by nitriding gallium oxyhydroxide (GaO2H) powders in the flow of NH3 gas at a nitridation temperature of 950 °C for 35 min. X-ray powder diffraction (XRD) patterns and Fourier transform infrared (FTIR) spectra reveal that simple heat treatment of GaO2H in the flow of NH3 leads to the formation of hexagonl GaN with lattice constants a = 3.191 Å, and c = 5.192 Å at 950 °C through intermediate conversion of β-Ga2O3. X-ray photo-electron spectroscopy (XPS) confirms the formation of bonding between Ga and N, and yields that the surface stoichiometry of Ga : N approximates 1 : 1. Transmission electron microscopy (TEM) image indicates that GaN particle is a single crystal, and its morphology is ruleless.