کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10401221 | 891166 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spectroscopic study of the decomposition process of tetramethylsilane in the N2-H2 and N2-Ar low pressure plasma
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Spectroscopic study of the decomposition process of tetramethylsilane in the N2-H2 and N2-Ar low pressure plasma Spectroscopic study of the decomposition process of tetramethylsilane in the N2-H2 and N2-Ar low pressure plasma](/preview/png/10401221.png)
چکیده انگلیسی
The optical emission spectroscopy has been used to study the decomposition process of tetramethylsilane in a low pressure plasma. The Si(CH3)4-N2-H2 and Si(CH3)4-N2-Ar reactive mixtures, which are used for the deposition of SiCN layers, have been studied here. High energy active species were identified in the plasma phase and the electron excitation, vibrational and rotational temperatures as well as electron number density were determined for various compositions of the reactive mixtures. The electron excitation temperature (Si I, Ar I, H) was found to be higher than the vibrational temperatures (CN, N2, N2+) and considerably higher than the N2+ rotational temperature, as the results of nonequilibrium state of plasma generated. It was observed that introduction of tetramethylsilane as well as growth of hydrogen percentage led to lowering of the electron density and the rotational temperature. Optical actinometry was applied to study the Si(CH3)4-N2-H2 reactive mixture.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 14, Issue 9, September 2005, Pages 1498-1507
Journal: Diamond and Related Materials - Volume 14, Issue 9, September 2005, Pages 1498-1507
نویسندگان
P. Jamroz, W. Zyrnicki,