کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411112 | 894548 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature and field dependent mobility in pentacene-based thin film transistors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Temperature and field dependent mobility in pentacene-based thin film transistors Temperature and field dependent mobility in pentacene-based thin film transistors](/preview/png/10411112.png)
چکیده انگلیسی
Pentacene-based thin film transistors (TFTs) have been fabricated and analyzed to investigate the temperature and electric field dependence of hole mobility. At room temperature, the TFT device characteristics have displayed the hole mobility of 0.26Â cm2/VÂ s, threshold voltage of â3.5Â V, subthreshold slope of 2.5Â V/decade, and on/off ratio of 105. Over the temperature range of 300-450Â K, the hole mobility is found to increase to a peak value, followed by decrease to very low values. Similar behavior has also been observed in TFTs fabricated at a higher pentacene deposition rate. However, in this case over 20 times reduction in the extracted hole mobility values has been observed, due to the less ordered layered structure of the pentacene film present. No annealing effects have also been observed up to a temperature of about 410Â K. The field dependence of hole mobility has also been evaluated at room temperature, and observed to noticeably increase with increase in electric field, over the biasing conditions considered.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 6, June 2005, Pages 884-888
Journal: Solid-State Electronics - Volume 49, Issue 6, June 2005, Pages 884-888
نویسندگان
Mo Zhu, Guirong Liang, Tianhong Cui, Kody Varahramyan,