کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411128 | 894548 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tunnelling enhanced recombination in polycrystalline CdS/CdTe and CdS/Cu(In,Ga)Se2 heterojunction solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This article investigates the results of current-voltage measurements made at different temperatures on vacuum deposited ZnO/CdS/Cu(In,Ga)Se2 and CdS/CdTe heterojunction solar cells. We propose that the current-voltage data of a typical CdS/CdTe solar cell can be analysed by tunnelling enhanced bulk and interface recombination which gives a quantitative description of the electronic loss mechanisms in the chalcopyrite based heterojunction solar cells. We show that the temperature dependence of the saturation current and the diode ideality factor of the CdS/CdTe device are well described by this model. Below 240Â K, tunnelling enhanced recombination at junction interface is found to play a major role for recombination with activation and tunnelling energies as about 0.77Â eV and E00Â =Â 36Â meV, respectively. The transport mechanism in ZnO/CdS/Cu(In,Ga)Se2 device appeared to be also dominated by interface recombination. This unexpected behaviour is attributed to the presence of Cu-rich and indium depleted thin layer which might possibly be formed on the absorber surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 6, June 2005, Pages 991-996
Journal: Solid-State Electronics - Volume 49, Issue 6, June 2005, Pages 991-996
نویسندگان
Habibe Bayhan, A. Sertap KavasoÄlu,