کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411167 | 894553 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
On the great potential of non-doped MOSFETs for analog applications in partially-depleted SOI CMOS process
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: On the great potential of non-doped MOSFETs for analog applications in partially-depleted SOI CMOS process On the great potential of non-doped MOSFETs for analog applications in partially-depleted SOI CMOS process](/preview/png/10411167.png)
چکیده انگلیسی
In this paper we discuss the potential applicability of SOI MOS transistors with non-doped (or intrinsic) channels for analog applications. We present the comparison of doped and intrinsic nMOSFETs in terms of parameters of the importance for analog designers and demonstrate that intrinsic devices are very promising for low-voltage, low-power analog applications, as they feature better threshold voltage control and predictability, higher maximum transconductance, driving current and attenuation of floating-body effects. We show that the use of non-doped devices gives the opportunity to create fully-depleted (FD) devices within a partially-depleted (PD) process. A new effect occurring in such intrinsic devices, which we call “PD-to-FD jump”, is described for the first time.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 5, May 2005, Pages 708-715
Journal: Solid-State Electronics - Volume 49, Issue 5, May 2005, Pages 708-715
نویسندگان
V. Kilchytska, D. Levacq, L. Vancaillie, D. Flandre,