کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411182 | 894553 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An analytical threshold voltage roll-off equation for MOSFET by using effective-doping model
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper presents a new analytical threshold voltage roll-off equation for MOSFET by effective-doping model. The short-channel MOSFET is viewed as distributed MOS capacitors with different effective-doping concentration in series. The 2D scale-length approach is adopted to find the potential distribution and the corresponding effective-doping concentration. The source and drain controlled charges are averaged over the channel depletion region to provide more realistic account of the effective-doping concentration. In addition, the lowering of the required band bending and the widening of the channel depletion are considered. As a result, the sub-exponential dependence of the threshold voltage roll-off on channel length is observed. The two governing factors, channel length and drain voltage, can be decoupled in the limit of a mild short-channel effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 5, May 2005, Pages 808-812
Journal: Solid-State Electronics - Volume 49, Issue 5, May 2005, Pages 808-812
نویسندگان
Chun-Hsing Shih, Yi-Min Chen, Chenhsin Lien,