کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10411191 894558 2005 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Incorporation of quantum corrections to semiclassical two-dimensional device modeling with the Wigner-Boltzmann equation
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Incorporation of quantum corrections to semiclassical two-dimensional device modeling with the Wigner-Boltzmann equation
چکیده انگلیسی
A new method for accounting for quantum effects in semiclassical device simulation is presented. The approach is based on the solution to the Wigner-Boltzmann equation, which is derived from the Schrodinger equation. The Wigner-Boltzmann equation is truncated to order ℏ2, and then formulated using spherical harmonics. This facilitates analytical evaluation of the collision integral, and allows for reduction of dimensionality. The Wigner-Boltzmann equation is solved self-consistently with the Poisson and hole-current continuity equations for a BJT and a MOSFET. The results show that the carrier concentrations predicted by the Wigner-Boltzmann equation near the base-emitter junction and the MOSFET channel are less than that predicted by the semiclassical Boltzmann model. Calculations show terminal currents to be 2% and 7% lower for the quantum simulations than the semiclassical results for the BJT and MOSFET, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 2, February 2005, Pages 145-154
نویسندگان
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