کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411193 | 894558 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
High-linearity In0.52Al0.48As/In0.53Ga0.47As doped channel transistor (DCFET) was successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Due to the presence of doped InGaAs channel, undoped InAlAs barrier layer and low-temperature growth InAlAs buffer layer, good carrier confinement, improved breakdown and a wide transconductance operation regime are expected. Experimentally, for a 1.5 Ã 100 μm2 device, high-transconductance of 291 mS/mm, high-gate-drain breakdown voltage of 20.2 V, high-turn-on voltage of 0.78 V, wide operation regime of 288 mA/mm as well as significantly improved gate voltage swing of 1.05 V are achieved. Additionally, the studied device shows good temperature characteristics. The performance indicates the promise for high-power and high-temperature applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 2, February 2005, Pages 163-166
Journal: Solid-State Electronics - Volume 49, Issue 2, February 2005, Pages 163-166
نویسندگان
Yeong-Jia Chen, Wei-Chou Hsu, Yen-Wei Chen, Yu-Shyan Lin, Rong-Tay Hsu, Yue-Huei Wu,