کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411196 | 894558 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Experimental and numerical study of H+ irradiated p-i-n diodes for snubberless applications
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
This paper shows a comprehensive experimental and numerical investigation of proton-irradiated diodes for high-power snubberless applications. By means of DC and transient current-voltage measurements, OCVD extraction of lifetimes, C-V profiling, and DLTS trap characterization, a wide set of parameters was experimentally extracted and fed into a physically accurate mixed-mode simulation model. The numerical results are shown to be consistent with the available measured data, for example in showing the much better turn-off softness of proton-irradiated samples versus electron-irradiated ones. The complete physical/electrical model set-up in this work can now be used as an aid in the design and development of new proton-irradiated diodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 2, February 2005, Pages 183-191
Journal: Solid-State Electronics - Volume 49, Issue 2, February 2005, Pages 183-191
نویسندگان
P. Cova, R. Menozzi, M. Portesine, M. Bianconi, E. Gombia, R. Mosca,