Effects of 72Ge/74Ge preamorphization combined with sub-keV boron implantation in pMOSFET fabrication

► We demonstrate the thickness by controlling a high 72Ge/74Ge ratio, the device performance can be enhanced. ► The optimum conditions of Ge PAI would help the confinement of boron ions to avoid the channel effect. ► a low 72Ge/74Ge ratio would cause the degradation of Vth roll-off and Ion/Ioff ratio. ► We examine a thinner Ge amorphous layer has a weak ability to suppress the channeling tail of boron.