Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of 〈1 1 1〉 and 〈1 0 0〉 crystal orientation at high electric fields

This paper presents a new set of parameters for the mobility as function of temperature and electric field for 〈1 1 1〉 and 〈1 0 0〉 crystal orientation. These parameters are derived from time of flight measurements of drifting charge carriers in planar p+nn+ diodes in the temperature range between −30 °C and 50 °C and electric fields of 2 × 103 V/cm to 2 × 104 V/cm.