Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations

► BDT is a novel device that is based upon an electron steering and a deflection effect. ► The BDT has a unique planar device capable to perform logic operations. ► The low gate capacitance should allow THz performance. ► BDT possesses both the positive and negative transconductance region. ► Ideal for frequency doubling at very high speeds.