کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411648 | 894772 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High performance analog operation of double gate transistors with the graded-channel architecture at low temperatures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
This work studies the use of channel engineering by means of graded-channel profile on double gate SOI MOSFETs for improving the analog performance and comparing their output characteristics with conventional double gate SOI transistors at low temperatures from room temperature down to 95Â K. Two-dimensional simulations performed here provide a physical explanation for the improved analog device characteristics given by the double gate graded-channel MOSFETs, showing significantly reduced electric field and hence impact ionization rate, which is well known to plague the output characteristics of SOI MOSFETs in the low temperature range. The Early voltage degrades as the temperature decreases but this reduction reflects negligibly in the low frequency open loop gain for a temperature range of 150-300Â K due to compensation provided by the transconductance over drain current ratio. The graded-channel structure can finally improve the intrinsic gain of conventional double gate transistor from 67Â dB to 90Â dB at 300Â K. In the range of LLD/L between 0.20 and 0.35, the gain reaches 90Â dB and is weakly temperature-dependent with less than 10% reduction in the range of 300Â K down to 95Â K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 10, October 2005, Pages 1569-1575
Journal: Solid-State Electronics - Volume 49, Issue 10, October 2005, Pages 1569-1575
نویسندگان
Marcelo Antonio Pavanello, João Antonio Martino, Jean-Pierre Raskin, Denis Flandre,