کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10411656 894772 2005 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A scalable substrate network for compact modelling of deep trench insulated HBT
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A scalable substrate network for compact modelling of deep trench insulated HBT
چکیده انگلیسی
3D Physical simulation has been used to analyse the impact of substrate parasitic elements on HBT electrical characteristics. A geometry scalable SPICE model is proposed and the resulting electrical simulation results are compared with physical simulation results. All lumped elements can be calculated directly from layout and technological data. The model is implemented in the scalable HBT compact model HICUM Level 0. A comparison with respect to measurements from a 0.25 μm BiCMOS technology with several HBT emitter areas shows an improvement of the simulation results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 10, October 2005, Pages 1623-1631
نویسندگان
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