کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10411665 894772 2005 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation
چکیده انگلیسی
In this work a continuous analytical model for analog simulation of submicron asymmetrically doped silicon-on-insulator (SOI) nMOSFET using the graded-channel (GC) architecture, valid from weak to strong inversion regimes, is proposed. Analytical models accounting for mobility degradation due to the vertical field, channel length modulation, drain induced barrier lowering and velocity saturation effects have been included in the model formulation. Also the action of parasitic bipolar transistor intrinsic to the SOI MOSFET has been considered. The proposed model considers the highly doped part of the GC transistor acting as a 'main' transistor, whose drain voltage is modulated by the remaining part of the channel. Experimental results and two-dimensional simulated data were used to test the model, by comparing the drain current and some important characteristics for analog circuit design, such as the transconductance over the drain current ratio and output conductance, achieving a good agreement in both cases.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 10, October 2005, Pages 1683-1692
نویسندگان
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