Sensors on bipolar magnetotransistors with the base in the well

In this paper, highly sensitive magnetotransistors with bases in the well are presented. Connecting contacts of the base and the well creates a threshold of operating, negative magnetosensitivity, growing of sensitivity in a weak magnetic field. A transistor can service an electron-hole plasma of a generator. This device is based on the volumetric mechanism of concentration-recombination sensitivity, the currents unpack the principle ensuring maximum relative sensitivity for current 2000 T−1 in the magnetic field of the Earth.