کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411679 | 894775 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Carrier transport mechanisms and photovoltaic properties of Au/p-ZnPc/p-Si solar cell
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The dark current density-voltage characteristics of Au/p-ZnPc/p-Si device at different temperatures ranging from 302 to 364 K have been investigated. Results showed a rectification behavior. At low forward bias, the current density was found to limited by the thermionic emission of holes from p-Si over the organic/inorganic barrier in the ZnPc thin film, while at high voltages, space charge limited current mechanism dominated by a single trapping level. Junction parameters such as, built-in potential, Vbi, carrier concentration, N, the width of the depletion layer, W, were obtained from the C-V measurements. The current density-voltage characteristics under light illumination provided by tungsten lamp (200 W/m2) gives values of 0.44 V, 31.25 A/m2, 0.335% and 2.3% for the open circuit voltage, Voc, the short circuit current density, Jsc, the fill factor, FF, and conversion efficiency, η, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 8, August 2005, Pages 1314-1319
Journal: Solid-State Electronics - Volume 49, Issue 8, August 2005, Pages 1314-1319
نویسندگان
M.M. El-Nahass, H.M. Zeyada, M.S. Aziz, N.A. El-Ghamaz,