کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411691 | 894775 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A low insertion loss switch using ordering InGaP/AlGaAs/InGaAs pHEMT technology
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
A low insertion loss (LIL) switch for GSM and WLAN applications was demonstrated by using 0.5 μm gate length InGaP/AlGaAs/InGaAs pHEMT technology. In order to improve the circuit reliability during a long-term high power operation, an ordering InGaP Schottky layer was applied in this study. The ordering type InGaP Schottky layer also provides an extreme lower ÎEc (<0.1 eV) as compared with AlGaAs ones. This characteristic is helpful to improve contact resistance and insertion loss of the switch. The fabricated LIL switch integrated circuit (IC) achieved a low insertion loss of 0.18 dB at 0.9 GHz. This InGaP/AlGaAs/InGaAs pHEMT has demonstrated an output power density of 284 mW/mm with drain-to-source voltage (Vds) equal to 3 V at 2 GHz. Beside, both on-resistance (Ron) and steady-state drain current (Idss) of 10 FET switches with gate width (Wg) equal to 2 mm maintained a stable performance during 3000 h reliability evaluation, achieving a variation less than 5%. Therefore, this novel design exhibited a high potential in LIL switches and PA MMIC design for GSM and WLAN applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 8, August 2005, Pages 1391-1395
Journal: Solid-State Electronics - Volume 49, Issue 8, August 2005, Pages 1391-1395
نویسندگان
Hsien-Chin Chiu, Yi-Chyun Chiang, Chan-Shin Wu,