کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411718 | 894783 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Si-based current-density-enhanced light emission and low-operating-voltage light-emitting/receiving designs
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
By the standard Si-CMOS process, several designs are investigated of low-operating-voltage light-emitting/receiving devices. Our forward-biasing Si-LED designs having power transfer efficiency higher than that of other reports using standard Si-CMOS process. The same device can be used as both an optical receiver and signal transmitter. Results of chip-to-chip and signal transmission tests have been presented and shown that the interdigitated structure can increase the active region in light emission and improve the response time and sensitivity of photodiode. Furthermore, we have demonstrated that the light emission can be enhanced by current density.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 7, July 2005, Pages 1172-1178
Journal: Solid-State Electronics - Volume 49, Issue 7, July 2005, Pages 1172-1178
نویسندگان
Hsiu-Chih Lee, Cheng-Kuang Liu,