کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411726 | 894783 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC Effects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC](/preview/png/10411726.png)
چکیده انگلیسی
The effects of trichloroethylene (TCE) concentration on the thermal oxidation of SiC are studied in terms of the oxide quality and the properties of the SiO2/SiC interface. It is found for the first time that as TCE concentration increases, the flat-band voltage, oxide-charge density and interface-state density all exhibit a turnaround behavior. For TCE ratio (flow rate of N2Â +Â TCE to flow rate of O2) less than 0.01, the flat-band voltage increases with TCE concentration while the oxide-charge and interface-state densities decrease. However, for TCE ratio larger than 0.05, opposites occur with the flat-band voltage decreasing and the two densities increasing. The TCE-induced reductions of the oxide charges and interface states at 0.1-0.5Â eV below the conduction-band edge are 93% and 24-99%, respectively, for a TCE ratio of 0.05. Moreover, as TCE ratio increases from 0 to 0.2, the oxide resistance against stress-induced damage increases. In summary, the TCE oxidation with appropriate TCE concentration can reduce the oxide charges and improve the interface properties and oxide reliability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 7, July 2005, Pages 1223-1227
Journal: Solid-State Electronics - Volume 49, Issue 7, July 2005, Pages 1223-1227
نویسندگان
B.L. Yang, L.M. Lin, H.B. Lo, P.T. Lai,