High-temperature (up to 773Â K) operation of 6-kV 4H-SiC junction diodes

Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have been investigated in the temperature range T = 300-773 K. Analysis of the forward current-voltage characteristics and reverse current recovery waveforms shows that the lifetime τ of non-equilibrium carriers steadily increases with temperature across the entire temperature interval. The rise in τ and decrease in carrier mobilities and diffusion coefficients with increasing temperature nearly compensate each other as regards their effect on the differential resistance of the diode, Rd. As a result, Rd is virtually temperature independent. The bulk reverse current is governed by carrier generation in the space-charge region via a trap with activation energy of 1.62 eV. The surface leakage current of packaged structures does not exceed 2 × 10−6 A at T = 773 K and a reverse bias of 300 V.