کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411921 | 894841 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
3D Simulation study of gate coupling and gate cross-interference in advanced floating gate non-volatile memories
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: 3D Simulation study of gate coupling and gate cross-interference in advanced floating gate non-volatile memories 3D Simulation study of gate coupling and gate cross-interference in advanced floating gate non-volatile memories](/preview/png/10411921.png)
چکیده انگلیسی
In this paper we present a 3D simulation study of gate coupling and gate cross-interference in advanced floating gate non-volatile memories. First, the simulation methodology is introduced and validated against experimental data. Then, physical effects that significantly impact the coupling calculation are pointed out. Finally, the method is applied to a sensitivity study of both gate coupling and gate cross-interference in different non-volatile memory architectures showing the increasing importance of this kind of analysis in designing more advanced technologies.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 11, November 2005, Pages 1805-1812
Journal: Solid-State Electronics - Volume 49, Issue 11, November 2005, Pages 1805-1812
نویسندگان
Andrea Ghetti, Luca Bortesi, Loris Vendrame,