کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10411937 894849 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A semi-empirical approach to study a high performance Poly-Si TFT with selectively floating a:Si layer
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A semi-empirical approach to study a high performance Poly-Si TFT with selectively floating a:Si layer
چکیده انگلیسی
This paper presents a semi-empirical approach based on charge sheet model of Poly-Si TFT, valid in all regions to explain the electrical characteristics of a new Poly-Si TFT structure having an air-gap of thickness 50 nm just below the channel region. The model predicts the output as well as the transfer characteristics of the device for various grain sizes. The presence of air-gap aims at increasing the effective field dependent mobility which eventually drastically improves the current driving capability and the performance of the device. The theoretical results have been compared with the experimental data to validate the present approach.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 4, April 2005, Pages 558-561
نویسندگان
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