Properties of Pt/4H-SiC Schottky diodes with interfacial layer at elevated temperatures

Pt/4H-SiC Schottky diodes were fabricated and their current-voltage (I-V) characteristics within the temperature range of 300-480 K were subsequently measured and analyzed. Diodes' parameters (barrier height, ideality factor and series resistance) were extracted from the I-V curves using Cheung's method. Based on I-V and high-frequency capacitance-voltage (C-V) measurements the interface states distribution in the semiconductor bandgap was determined. Analysis of obtained results indicates the presence of thin interfacial layer between metal and semiconductor.