کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10413339 895562 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A qualitative study of the influence of confinement direction on phonon and interface roughness scattering in p-type FD/SOI devices
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A qualitative study of the influence of confinement direction on phonon and interface roughness scattering in p-type FD/SOI devices
چکیده انگلیسی
In this work we present a theoretical study of the quantization in a p-type FD/SOI device with confinement in the main crystalline directions. To carry out this study, we solved the Schrödinger effective mass equation, taking into consideration non-parabolicity, warping and degeneracy of the silicon valence band. We investigated the relative populations of the lowest subbands, and proposed a set of subbands for the efficient analysis of hole dynamics. We also evaluated the phonon and interface roughness scattering rates to provide a qualitative picture of how confinement direction influences those rates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 9, September 2005, Pages 1454-1460
نویسندگان
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