A comprehensive study of carrier velocity modulation in DGSOI transistors

Velocity modulation transistors (VMT) are proposed as a way to explode short transit time between two adjacent channels with different transport properties in order to obtain a fast switch. Originally proposed for III-V heterostructures, a Monte Carlo study of silicon-based VMTs is presented in this work showing that surface roughness in double-gate silicon-on-insulator devices can be used as a mobility degradation mechanism to obtain current ratios higher than 30 and therefore feasible devices. Transient simulations have been also carried out obtaining sub-picosecond switch times for 0.1 μm gate length. Switch time limitations are also discussed including both intrinsic and extrinsic factors.