کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10413347 895562 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Quantum transport in ultra-scaled double-gate MOSFETs: A Wigner function-based Monte Carlo approach
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Quantum transport in ultra-scaled double-gate MOSFETs: A Wigner function-based Monte Carlo approach
چکیده انگلیسی
Source-to-drain current including tunneling in deca-nanometer double-gate MOSFETs is studied using a Monte Carlo approach for the Wigner transport equation. This approach allows the effect of scattering to be included. The subband structure is calculated by means of post-processing results from the device simulator Minimos-NT, and the contribution of the lowest subband is determined by the quantum transport simulation. Intersubband coupling elements are explicitly calculated and proven to be small in double-gate MOSFETs. The simulation results clearly show an increasing tunneling component of the drain current with decreasing gate length. For long gate length the semi-classical result is recovered.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 9, September 2005, Pages 1510-1515
نویسندگان
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