کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10413348 | 895562 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electron mobility and magneto transport study of ultra-thin channel double-gate Si MOSFETs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electron mobility and magneto transport study of ultra-thin channel double-gate Si MOSFETs Electron mobility and magneto transport study of ultra-thin channel double-gate Si MOSFETs](/preview/png/10413348.png)
چکیده انگلیسی
We report on detailed room temperature and low temperature transport properties of double-gate Si MOSFETs with the Si well thickness in the range â¼7-17Â nm. The devices were fabricated on silicon-on-insulator wafers utilizing wafer bonding, which enabled us to use heavily doped metallic back gate. We observe mobility enhancement effects at symmetric gate bias at room temperature, which is the finger print of the volume inversion/accumulation effect. An asymmetry in the mobility is detected at 300Â K and at 1.6Â K between the top and back interfaces of the Si well, which is interpreted to arise from different surface roughnesses of the interfaces. Low temperature peak mobilities of the reported devices scale monotonically with Si well thickness and the maximum low temperature mobility was 1.9Â m2/VÂ s, which was measured from a 16.5Â nm thick device. In the magneto transport data we observe single and two sub-band Landau level filling factor behavior depending on the well thickness and gate biasing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 9, September 2005, Pages 1516-1521
Journal: Solid-State Electronics - Volume 49, Issue 9, September 2005, Pages 1516-1521
نویسندگان
M. Prunnila, J. Ahopelto, F. Gamiz,