کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10413350 | 895562 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modeling the uniform transport in thin film SOI MOSFETs with a Monte-Carlo simulator for the 2D electron gas
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, we present simulations of some of the most relevant transport properties of the inversion layer of ultra-thin film SOI devices with a self-consistent Monte-Carlo transport code for a confined electron gas. We show that size induced quantization not only decreases the low-field mobility (as experimentally found in [Uchida K, Koga J, Ohba R, Numata T, Takagi S. Experimental eidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance and threshold voltage of ultrathin body SOI MOSFETs, IEEE IEDM Tech Dig 2001;633-6; Esseni D, Mastrapasqua M, Celler GK, Fiegna C, Selmi L, Sangiorgi E. Low field electron and hole mobility of SOI transistors fabricated on ultra-thin silicon films for deep sub-micron technology application. IEEE Trans Electron Dev 2001;48(12):2842-50; Esseni D, Mastrapasqua M, Celler GK, Fiegna C, Selmi L, Sangiorgi E, An experimental study of mobility enhancement in ultra-thin SOI transistors operated in double-gate mode, IEEE Trans Electron Dev 2003;50(3):802-8. [1], [2], [3]]), but also the electron saturation velocity and the carrier heating depend on the subband structure, and thus on the silicon film thickness.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 9, September 2005, Pages 1529-1535
Journal: Solid-State Electronics - Volume 49, Issue 9, September 2005, Pages 1529-1535
نویسندگان
Luca Lucci, Pierpaolo Palestri, David Esseni, Luca Selmi,