A new scaling theory for fully-depleted SOI double-gate MOSFET's: including effective conducting path effect (ECPE)

A new scaling theory for fully-depleted double-gate (DG) SOI MOSFET's is established, which gives a guidance for the device design so that maintaining a precise subthreshold factor for given device parameters. By investigating the subthreshold conducting phenomenon of DG MOSFET's, the effective conducting path effect (ECPE) is employed to obtain the natural length λ3 to guide the design. With ECPE, the minimum channel potential Φdeff,min shows the new scaling factor α3 to model the subthreshold behavior. Compared to conventional scaling rule, our model accounting for ECPE caused by substrate doping density not only provides a unified scaling rule but also offers the basic designing guidance for fully-depleted DG SOI MOSFET's.