کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10413374 | 895565 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A new LIGBT structure to suppress substrate currents in a junction isolated technology
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A new LIGBT structure to suppress substrate currents in a junction isolated technology A new LIGBT structure to suppress substrate currents in a junction isolated technology](/preview/png/10413374.png)
چکیده انگلیسی
In this paper, a new lateral insulated gate bipolar transistor (LIGBT) structure is proposed to suppress substrate currents in a junction isolated technology by using two buried layers on top of each other. This structure not only allows to reduce the substrate to anode current ratio to less than 10â7, it also yields a device with a large safe operating area and a fast turn-off. Because of the two buried layers, the proposed LIGBT can be used as a floating (above substrate potential) device. Furthermore, the LIGBT is introduced in an existing 80 V smart power technology without the costly need of defining new layers. It has also been shown that the proposed LIGBT can compete with vertical DMOS (VDMOS) devices when used as a large driver. Together with an equivalent circuit, two dimensional simulation has been used to explain the observed device's substrate current behaviour.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 3, March 2005, Pages 363-367
Journal: Solid-State Electronics - Volume 49, Issue 3, March 2005, Pages 363-367
نویسندگان
B. Bakeroot, J. Doutreloigne, P. Moens,