کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10413386 895565 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ultrathin oxynitride films grown on Si0.74Ge0.26/Si heterolayers using low energy plasma source nitrogen implantation
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Ultrathin oxynitride films grown on Si0.74Ge0.26/Si heterolayers using low energy plasma source nitrogen implantation
چکیده انگلیسی
Ultrathin (<100 Å) oxynitrides were grown on strained Si0.74Ge0.26/Si heterolayers by low energy plasma source nitrogen implantation followed by microwave plasma oxidation at a low temperature. Secondary ion mass spectroscopy analysis revealed the incorporation of nitrogen into the strained Si0.74Ge0.26/Si heterolayers, forming good quality oxynitride films upon plasma oxidation. Though the fixed oxide and interface charge densities are relatively high, grown films exhibit low leakage current and high breakdown field strength (6-9 MV/cm), indicating that the oxynitrides formed by plasma source nitrogen implantation are suitable for metal-oxide-semiconductor devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 3, March 2005, Pages 449-452
نویسندگان
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