کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10413391 | 895565 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Scaling of lowered source/drain (LSD) and raised source/drain (RSD) ultra-thin body (UTB) SOI MOSFETs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Ultra-thin body (UTB) SOI MOSFETs are considered as one of most promising candidates for deca-nano-scale regimes. The device characteristics of two different UTB MOSFETs with raised source/drain (RSD) and lowered source/drain (LSD), respectively, are investigated with DC and AC considerations. The results suggest that LSD-UTB SOI MOSFETs show better control of the off-state leakage current, about one order of magnitude lower than that of RSD-UTB MOSFETs. The short-channel effect (SCE) and drain-induced-barrier-lowering (DIBL) effect are more effectively suppressed in LSD-UTB MOSFETs. And the intrinsic delay of LSD-UTB device is smaller than that of RSD-UTB as a result of the greatly reduced parasitic capacitance. In addition, the LSD-UTB MOSFETs demonstrate better scaling capability than RSD-UTB MOSFETs. And LSD-UTB can greatly relax the requirement for silicon body thickness by â¼60%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 3, March 2005, Pages 479-483
Journal: Solid-State Electronics - Volume 49, Issue 3, March 2005, Pages 479-483
نویسندگان
Xia An, Ru Huang, Xing Zhang, Yangyuan Wang,