Impurity removal and overall rate constant during low pressure treatment of liquid silicon

► Vacuum refining of Si simulating industrial environment is investigated. ► Fundamental data regarding elemental vapor pressure in Si is summarized. ► Fundamental data for overall rate constant substantial for kinetic analyses were experimentally confirmed for 11 elements at four different melt temperatures. ► New experimental data for concentration of 28 elements in liquid silicon for various temperatures is provided. ► Refractory material for ultra-pure Si treatment is analyzed and recommended.