کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10625275 989622 2014 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparative study of the sintering process and thin film sputtering of AZO, GZO and AGZO ceramics targets
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Comparative study of the sintering process and thin film sputtering of AZO, GZO and AGZO ceramics targets
چکیده انگلیسی
Experimental results showed that when co-doped by 1.5 mol% Al and 0.5 mol% Ga, the Al-Ga co-doped ZnO targets had higher maximum relative densities and lower minimum resistivities than the 2 mol% Al doped ZnO and 0.5 mol% Ga doped ZnO targets. In addition, the AGZO thin film had better electrical properties than the other two thin films. The lowest resistivity of 8.12×10−4 Ω cm was achieved on AGZO thin films deposited at 200 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 40, Issue 8, Part B, September 2014, Pages 12905-12915
نویسندگان
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