Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films

► Demonstration of both high (> 7) and low (< 3) k for a single material. ► Assignment of all key IR absorption bands in 3C-SiC and a-SiC:H. ► Correlation between SiC IR bands and crystalline versus amorphous structure. ► Clear observation of network bond percolation in SiC. ► Fabrication of porous a-SiC:H thin films.