Defect annealing processes for polycrystalline silicon thin-film solar cells

► Defect annealing processes were applied to polycrystalline silicon thin films. ► Conventional rapid thermal annealing was compared to novel annealing processes using a laser system and a zone-melting recrystallization setup. ► The open circuit voltages could be enhanced from below 170 mV up to 482 mV. ► Increase in Sun's-VOC values with decrease in FWHM of the TO Raman phonon of crystalline silicon. ► Solar cells were fabricated for I-V-measurements: Best solar cell efficiency of 6.7%.