Synthesis and characterization of well-aligned catalyst-free phosphorus-doped ZnO nanowires

► Well aligned phosphorus-doped ZnO nanowires were grown on (1 0 0) Si wafer by the conventional (PVD) method. ► No metal catalysts or buffer layer were used in the growth process. ► The lattice fringes were in the ordered atomic arrangement, corresponding to the (0 0 2) fringes of the hexagonal ZnO. ► The substitution of P on O sites causes an increment of lattice spacing in doped NWs compared to pure one.